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Alterações no passo #12

Edição por Jake Devincenzi

Edição aprovada por Jake Devincenzi

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[* black] A6 general structure cross-section.
[* black] The vertical structures are the contacts between layers.
[* black] The raised mesa-looking shapes between the contacts are actually the transistors' structures.
[* red] This very thin line confirms that this is the 32nm HKMG (Hi-K metal gate) process.
[* black] 32 HKmg process is the same as used in Apple TV (APL2498 on Chipworks).
[* black] In a FET[http://en.wikipedia.org/wiki/FET|FET (Field Effect Transistor)Transistor)], K is a physical parameter of the device,device that depends on the doping levels of the silicon,silicon and the size of the transistor. The gate is the control pin on aan FET.
[* black] In a FET[http://en.wikipedia.org/wiki/FET|FET (Field Effect Transistor)Transistor)], K is a physical parameter of the device,device that depends on the doping levels of the silicon,silicon and the size of the transistor. The gate is the control pin on aan FET.